The MB85RC64 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of
8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming
the nonvolatile memory cells.
The MB85RC64 adopts the two-wire serial interface.
Unlike SRAM, the MB85RC64 is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC64 has improved to be at
cycles, significantly out performing Flash memory and E
PROM in the number.
The MB85RC64 does not need a polling sequence after writing to the memory such as the case of Flash
memory nor E
• Bit configuration : 8,192 words × 8 bits
• Operating power supply voltage : 2.7 V to 3.6 V
• Operating frequency : 400 kHz (Max)
• Two-wire serial interface : I
C-bus specification ver. 2.1 compliant, supports Standard-mode/
Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating temperature range : − 40 °C to +85 °C
• Data retention : 10 years ( + 75 °C)
• Read/write endurance : 10
• Package : Plastic / SOP, 8-pin (FPT-8P-M02)
• Low power consumption : Operating current 0.15 mA (Max: @400 kHz), Standby current 5 μA (Typ)
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