High Conductance Ultra Fast Diode
Sourced from Process 1P. See 1N4148 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Symbol Parameter Value Units
WIV Working Inverse Voltage 75 V
IO Average Rectified Current 200 mA
IF DC Forward Current 600 mA
if Recurrent Peak Forward Current 700 mA
if(surge) Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Tstg Storage Temperature Range -55 to +150 °C
TJ Operating Junction Temperature 150 °C
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